Abstract
A complex of electrophysical and technological studies of solid-state field-emission diodes is carried out. Emission comes from an array of nanometer objects near the semiconductor—polycrystalline diamond interface. The process route of the diode heterostructures includes the fabrication of nanometer masks and nanometer cone (tip) arrays, as well as plasma-assisted growth of polycrystalline diamond films on the surface of structures with nanometer cone arrays. In field-emission diodes thus formed, a current density as high as 20 A/cm2 is achieved at a threshold of field emission from the nanotip arrays into the diamond of about 0.5 V.
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