Abstract
Fabrication of a titanium dioxide/carbon nanotube (TiO2/CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO2 nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO2/CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO2/CNT hetero-structure is also investigated, and well modeled.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
