Abstract
Hexagonal polycrystalline boron nitride (BN) films are synthesized on Si and stainless steel mesh (SSM) substrates by plasma-assisted chemical vapor deposition. The BN film is as thin as 8–10 nm, being called nanofilm here. Field emission characteristics are measured for the substrates before and after deposition of the BN nanofilm. It is demonstrated for the BN nanofilm/flat Si substrate sample that the BN nanofilm reduces the effective potential barrier height through which electrons are tunneled, decreasing the turn-on electric field. In the case of the Ti-evaporated SSM substrate with a lower work function than that of Ni, the turn-on electric field is further reduced. The turn-on electric field as low as 3.0 V/μm is achieved for the BN nanofilm/Ti/SSM sample.
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