Abstract
Boron nitride nanogranular films on n-type silicon substrates were prepared and their field-emission performance was tested. The films started their electron emission at a mean electric field of 4.0 V/μm. The current density reached 1 mA/cm2 at 6.2 V/μm. The Fowler-Nordheim plot gave an enhancement factor β of 360. The films were boron-rich. As measured by scanning electron microscopy and atomic force microscopy, the films contained the cone-shaped islands with the diameter of 20–40 nm, which were believed to enhance the local electric field. Their performance parameters were comparable to the values of the samples with micrometer roughness.
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