Abstract
Spatial variation of field-emission currents in boron-doped polycrystalline diamond thin films grown by microwave plasma-assisted chemical-vapor deposition was investigated. Random distribution of electron emission sites was observed in microscale and the electron emission was inhomogeneous. Electron emission current was significantly increased for the higher boron-doping concentration and decreased in the thicker films. Activation of electron emission in the low electron emission area was observed. Threshold electric field was significantly decreased after a voltage-stressed activation process. These activated electron emission sites were stable and showed reproducible electron emission. The electron emission activation was possibly due to the diamond surface phase transformation and/or formation of conductive channels at the grain boundaries.
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