Investigation of the boron-doped CVD diamond films for use in sensors

Abstract

Boron-doped polycrystalline diamond thin films may have some use in electroanalysis since the doped diamond films are electrically conductive and chemically inert. In order to use the boron doped diamond thin films as an active electrode in sensors, we have investigated properties of the boron doped diamond thin films grown on silicon substrates by hot-filament assisted chemical vapor deposition (CVD) using a gas mixture of methane and hydrogen. As-deposited films were characterized by Raman spectroscopy and scanning electron microscopy for their chemical nature and morphology, respectively. In situ doping of boron was achieved by heating H 3 BO 3 powder during the deposition. The electrochemical behavior of the boron doped diamond thin film electrodes were investigated using cyclic voltammetry. A reduction peak of Fe 3+ was observed. Our results show that the boron doped diamond thin films possess suitable properties of an electrode material for use in sensors.