Field-Effect Transistors with Submicrometer Gate Lengths Fabricated fromLaAlO3−SrTiO3-Based Heterostructures

Abstract

Complex oxides present a rich spectrum of electronic and magnetic properties, of interest for both functional devices and fundamental research. The authors utilize the two-dimensional electron liquid at the LaAlO${}_{3}$/SrTiO${}_{3}$ interface as a drain-source channel, plus advanced electron-beam lithography, to create field-effect transistors (FETs) with gate lengths down to 60 nm. Most of their properties are attributable to short-channel effects, as in semiconductor FETs, yet there are several characteristic differences as well.