Dialkylated dibenzotetrathienoacene derivative as semiconductor for organic field effect transistors

Abstract

A novel semiconductor material based on dialkylated thienoacene is designed and synthesized. The dihexyl-substituted dibenzotetrathienoacene derivative C6-DBTTA exhibits high stability which is evidenced by thermogravimetric analysis (TGA), UV–vis spectroscopy and electrochemistry. X-ray diffraction measurements of the vacuum-evaporated thin films show strong diffraction and indicate that the molecules are stacked nearly perpendicular to the substrate. AFM images reveal that the morphology of thin films depended on the deposition temperature. Thin film FETs devices based on C6-DBTTA were constructed and showed high mobility up to 0.48cm2V−1s−1 and an on/off ratio over 107. These results suggest that this new dihexylated thienoacene is an important organic semiconductor for field effect transistors.