Field-Effect Transistor Based on Si with LaAlO3−δ as the Source and Drain

Abstract

N-type LaAlO3−δ thin films are epitaxially grown on p-type Si substrates. An enhancement mode field-effect transistor is constructed with oxygen deficient LaAlO3−δ as the source and drain, p-type Si as the semiconducting channel, and SiO2 as the gate insulator, respectively. The typical current-voltage behavior with field-effect transistor characteristic is observed. The ON/OFF ratio reaches 14 at a gate voltage of 10V, the field-effect mobility is 10 cm 2/V · s at a gate voltage of 2 V, and the transconductance is 5 × 10−6 A/V at a drain-source voltage of 0.8 V at room temperature. The present field-effect transistor device demonstrates the possibility of realizing the integration of multifunctional perovskite oxides and the conventional Si semiconductor.