Abstract
Field effect studies on metal-insulator-semiconductor structures of Ag-mica-p-Pb 0.8Sn 0.2Te were made in the temperature range 77–400 K.. It was observed that the effect of negative gate field is to decrease the Hall coefficient and Hall mobility, where the effect of positive gate field is opposite. Results are explained on the basis of accumulation and depletion of charge carriers. Films were annealed with laser pulses of varying energy densities 4–30 mJ cm 2 and varying number of pulses from 10–50. TEM and X-ray diffraction studies were made to know the structural changes which occurred due to laser annealing. Hall coefficient and Hall mobility studies were made on all the films and an increase in mobility was observed with laser annealing. Optical transmission studies were made on the films grown on KBr pellets.
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