Abstract
Field-effect studies on metal-insulator-semiconductor (MIS) structures of gold-mica Cu-doped p-type polycrystalline Te films have been made in the temperature region 77–500 K. It has been observed that the effect of negative gate voltage is to increase the carrier density and Hall mobility while the effect of positive gate voltages is opposite and less significant. The results have been interpreted in terms of accumulation and depletion of charge carriers at the insulator semiconductor interface and predominance of grain boundary barrier potential in limiting the mobility of charge carriers in accordance with the Petritz model.
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