Abstract
We studied the current-voltage (I–V) characteristics and the field effect mobility (μ FET) of polydiacetylene single crystals in the temperature range 4 K–300 K. Non-Ohmic I–V characteristics reveal the maximum of the Drain-Source current (I DS) at 170 K while the μ FET maximum appears at 130 K. The I DS along the backbone chains increases with the positive gate voltage (V G) whereas the I DS between the backbone chains increases with the negative V G. The anisotropy of the conductivity and the μ FET are observed. The current parallel to the PDA backbone is ∼ 10–1000 times higher than that perpendicular, while the electron mobility parallel to the PDA backbone is about 100 times higher than that perpendicular.
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