Abstract
Field effect experiments on a-Si:H films at the bottom (film-substrate interface) and the top (film-vacuum interface) of the film are reported. Because of the presence of an absorbate at the top surface, the field effect at the top is found to be much smaller than at the bottom. After a heat treatment at 175 °C for two to four hours, the field effect at the top and the bottom are found to be similar.
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