Abstract

A lightly doped n-type a-Si:H film, arranged in a field effect configuration, has been subjected to bias-annealing treatments. Depending on the sign and the magnitude of the gate bias, the conductivity of the quenched-in metastable states could be varied throughout the entire range that is accessible by chemical doping. CPM-measurements performed on extreme states suggest that the conductance changes are controlled by field-induced changes in the donor density.

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