Abstract
Theoretical electrostatic characteristics of structures based on metals, insulators, and semiconductor layers with thickness comparable to or less than the Debye screening radius (critical thickness layers) and semiconductors of semi-infinite geometry are studied. Some peculiarities of electric field screening in semiconducting critical-thickness layers are revealed on the basis of computer calculations of potential and charge distributions as well as differential capacitances as a function of applied voltage. The obtained characteristics are compared with characteristics of analogous semiconducting structures with semi-infinite geometry. [Russian Text Ignored]
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