Control of the crystalline structure of inkjet-printed semiconductor layers using overlap condition and surface wettability

Abstract

We demonstrate the effects of overlap condition and surface wettability of dielectric layers on the drying process and crystalline structure of inkjet-printed semiconductor layers. 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) was utilized to inkjet-print the semiconductor layer. Using various overlap conditions, semiconductor layers were inkjet-printed on dielectric layers with different surface wettabilities. It is observed that crystal growth and the resulting crystalline structures in inkjet-printed semiconductor layers are primarily determined by evaporation behavior, particularly the contact line movement of the drying semiconductor layers, which can be controlled via the overlap condition. With inappropriate overlap conditions, randomly oriented TIPS pentacene crystalline structures are generated in the semiconductor layer through irregular contact line recession. One-dimensionally oriented TIPS pentacene crystal structures can be obtained using the optimized overlap condition of 50% as a result of the uniform contact line movement. Relatively hydrophobic dielectric layers help to generate good crystallinity in the semiconductor layer. All-inkjet-printed organic thin film transistors (OTFTs) with well-oriented TIPS pentacene crystalline structures in the semiconductor layer show a high field effect mobility of ~0.1 cm2 V−1s−1, suggesting that, when printing inkjet semiconductor layers, the overlap condition and surface wettability of the dielectric layer are important factors for generating a well-oriented crystalline structure and thereby fabricating high-performance all-inkjet-printed OTFTs.