Abstract
A method for locally sensing and storing data of transverse domain wall chirality in planar nanowire logic and memory systems is presented. Patterned elements, in close proximity to the nanowires, respond to the asymmetry in the stray field from the domain wall to produce a chirality-dependent response. When a bias field is applied, a stray field-assisted reversal of the element magnetization results in a reversed remanent state, measurable by scanning electron microscopy with polarization analysis (SEMPA). The elements are designed as triangles with tips pointing toward the nanowire, allowing the shape anisotropy to be dominated by the base but having a portion with lower volume and lower energy barrier closest to the domain wall. Micromagnetic modeling assists in the design of the nanowire-triangle systems and experiments using SEMPA confirm the importance of aspect ratio and spacing given a constant bias field magnitude.
Highlights
The control of domain wall (DW) movements and interactions in magnetic nanowires (NWs) have received considerable interest within the past decade ever since the introduction of novel methods for logic1–3 and storage.4–6 This ongoing study of new systems for magnetic computing is expected to yield devices that will have application in niche markets where it is advantageous to combine information processing with data non-volatility and radiation hardness, such as in secure file transfers and smart memories
When a bias field is applied, a stray field-assisted reversal of the element magnetization results in a reversed remanent state, measurable by scanning electron microscopy with polarization analysis (SEMPA)
An element design for locally sensing and storing data on transverse domain wall chirality was presented. These elements may be used in magnetic logic systems that use domain wall chirality as the binary state variable
Summary
The control of domain wall (DW) movements and interactions in magnetic nanowires (NWs) have received considerable interest within the past decade ever since the introduction of novel methods for logic and storage. This ongoing study of new systems for magnetic computing is expected to yield devices that will have application in niche markets where it is advantageous to combine information processing with data non-volatility and radiation hardness, such as in secure file transfers and smart memories. The control of domain wall (DW) movements and interactions in magnetic nanowires (NWs) have received considerable interest within the past decade ever since the introduction of novel methods for logic and storage.4–6 This ongoing study of new systems for magnetic computing is expected to yield devices that will have application in niche markets where it is advantageous to combine information processing with data non-volatility and radiation hardness, such as in secure file transfers and smart memories. In addition to measuring chirality, these structures are designed to allow non-volatile storage of this information, allowing a measurement pulse to be made at any time after the domain wall has passed through the wire By utilizing these elements as the free layer in a GMR stack, integrated sensing and storage of transverse domain wall information may be achieved. Scanning electron microscopy with polarization analysis (SEMPA) was used to directly image and characterize the magnetic configuration of the domain walls and triangles in the experiments
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