Abstract
Exothermal resistance measurement reveals that the phase transition of Ge2Sb2Te5 phase change memory (PCM) can take place far below the traditional crystallization temperature. The activation energy of nucleation is no longer a constant and highly dependent on applied electric fields. The field-dependent activation energy becomes much lower with higher applied field. Further, the field-dependent activation energy can be described by an exponential function of the applied fields. These findings provide physical fundamentals for analysis of nucleation switching mechanism of PCM. A switching model has been developed and the simulated current-voltage curve is in good agreement with the experimental measurement.
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