Field Dependence of Charge Yield in Silicon Dioxide

Abstract

New experimental results for the yield of electron-hole pairs in SiO2 at low temperature are inconsistent with the Onsager theory of recombination. A revised model is developed to account for this, taking boundary conditions into effect. The model predicts a strong thickness dependence for yield under low-field conditions that is important at lower temperatures. New definitions for charge yield are proposed that distinguish between the initial escape probability and the net yield after charge transport, along with revised interpretations of older work on charge yield.