Abstract
The impact of heavy ion energy on charge yield in silicon dioxide was investigated by irradiating power VDMOSFETs with heavy ions at energies from 3 to 25 MeV/amu. The ion charge yield was determined by analyzing the gate voltage shifts of power VDMOSFETs induced by irradiation with 60Co $\gamma $ -rays and several different heavy ion species. A strong dependence of the charge yield on the ion energy is revealed. The charge yield at ion energy of 25 MeV/amu is greater by nearly an order of magnitude than that at the ion energy of 3 MeV/amu. The results are consistent with simulations of heavy ion track structures for low- and high-energy ions.
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