Abstract
Abstract Focused ion beam repair of opaque defects in photomasks and reticles has significant advantages over laser repair methods. The technique can however leave residual defects due to metal ion stains and other damage. A single step plasma etch antistain process has therefore been developed. However, by using an optimised approach to the FIB etch stage, post repair stain effects can be eliminated without the need for post repair antistaining. The effectiveness of the FIB repair method is demonstrated through wafer exposure trials using repaired reticles at G-line, I-line and DUV wavelengths.
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