Abstract
Nanoscale tellurium (Te) materials are promising for advanced optoelectronics owing to their outstanding photoelectrical properties. In this work, high-performance optoelectronic nanodevice based on a single tellurium nanotube (NT) was prepared by focused ion beam (FIB)-assisted technique. The individual Te NT photodetector demonstrates a high photoresponsivity of 1.65 × 104 AW−1 and a high photoconductivity gain of 5.0 × 106%, which shows great promise for further optoelectronic device applications.
Highlights
As one of the most important types of optoelectronic devices, photodetectors, converting incident light into an electrical signal, have attracted great attention in the fields of flame sensing, ozone sensing, conversion communication, environmental monitoring, video imaging, night vision, material recognition, early detection of primary tumors and astronomical exploration because of their excellent photoelectrical properties [1,2,3,4]
Photodetector based on an individual Te nanotube was rapidly prepared by focused ion beam (FIB)-assisted technique, which is easy to implement with high successful probability and repeatability
After the Si wafer was put into FIB system, single Te nanotube was extracted and transferred onto the 10 nm Cr/100 nm Au electrodes with a gap of 10 μm which were prepared by photolithography on SiO2 /Si, by using nano-manipulator under
Summary
As one of the most important types of optoelectronic devices, photodetectors, (including photodiode, photoconductor and phototransistor), converting incident light into an electrical signal, have attracted great attention in the fields of flame sensing, ozone sensing, conversion communication, environmental monitoring, video imaging, night vision, material recognition, early detection of primary tumors and astronomical exploration because of their excellent photoelectrical properties [1,2,3,4]. The photoelectric properties of the low dimensional Te nanomaterials, including photoelectric conversion efficiency, photoconductivity gain and light responsivity, have attracted many researchers’ attentions, due to their high surface-area-to volume ratios and the reduced dimension of the effective conductive channel. The photoelectric performance of the Te nanoscale devices has not been significantly improved Their photocurrent and light responsivity are small, which are not suitable for practical applications. Photodetector based on an individual Te nanotube was rapidly prepared by FIB-assisted technique, which is easy to implement with high successful probability and repeatability. The photodetector based on the individual nanotube with a diameter of 40 nm demonstrates a high photoresponsivity of 1.65 × 104 AW−1 and a high photoconductivity gain of 5.0 × 106 %
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