Abstract
The laser damage thresholds for gallium nitride and gallium oxide were found after exposing each sample to a femtosecond laser pulse. Threshold fluences were determined for both single pulse and multi pulse exposures. To accurately characterize the excited carrier density criteria in which visible laser damage occurs, we simulated carrier excitation dynamics for the entire laser pulse as it interacts with the target using the Keldysh model. From this a dynamic model of the conduction band carrier concentration was determined. For the measured single shot threshold fluences, the plasma critical density criteria for damage was met.
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