Abstract
A novel high efficiency microwave detector using a FET (field effect transistor) MGF 1304A was designed, fabricated and tested at 8.6 GHz. Detected audio power over absorbed microwave power ratio of this FET detector was 135% due to the positive gain, compared with the 5% efficiency of the conventional 1N23C diode detector. The test results show that the FET detector designed and fabricated is more efficient for low level microwave signal detection than the conventional diode detector. The FET detector absorbs very little microwave power compared to the diode detector and is therefore more efficient within the definition employed. This increase in conversion efficiency comes at the expense of having to add DC power. >
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