Abstract
This review article first presents a summary of current understanding of the magnetic properties and intrinsic ferromagnetism of transition-metal (TM)-doped ZnO films, which are typical diluted magnetic oxides used in spintronics. The local structure and magnetic behavior of TM-doped ZnO are strongly sensitive to the preparation parameters. In the second part, we discuss in detail the effects of doping elements and concentrations, oxygen partial pressure, substrate and its orientation and temperature, deposition rate, post-annealing temperature and co-doping on the local structure and subsequent ferromagnetic ordering of TM-doped ZnO. It is unambiguously demonstrated that room-temperature ferromagnetism is strongly correlated with structural defects, and the carriers involved in carrier-mediated exchange are by-products of defects created in ZnO. The third part focuses on recent progress in TM-doped ZnO-based spintronics, such as magnetic tunnel junctions and spin field-effect transistors, which provide a route for spin injection from TM-doped ZnO to ZnO. Thus, TM-doped ZnO materials are useful spin sources for spintronics.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.