Abstract
In this paper, we have reported the enhancing mechanism for room temperature ferromagnetism (RTFM) in pure and V doped ZnO (Zn0.95V0.05O and Zn0.90V0.10O) films on trioctylamine (amine) functionalization. X-ray diffraction patterns of amine functionalized ZnO films show slight weak reflection as compared to the corresponding as-deposited ZnO films. The presence of N 1s peak at 398.5 eV implies the formation of Zn–N bond on ZnO film surface. The quenching of visible emission on amine functionalization indicates the passivation of oxygen vacancies via Zn–N bonding. Amine functionalized ZnO films exhibit robust RTFM and the origin is discussed based on the experimental results.
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