Abstract
Ge ∕ MnAs multilayers are grown on (001) GaAs substrates by molecular-beam epitaxy. All samples investigated showed strong anomalous Hall effects at room temperature with p-type conductivity and temperature-dependent hysteresis loops in the magnetization. Ge∕MnAs multilayers also revealed an in-plane magnetic easy axis and a vanishingly small in-plane magnetic anisotropy. These results are in sharp contrast to MnAs∕GaAs digital alloys, where the reported Curie temperatures are at or below 50K, and demonstrate the potential of germanium-based spintronic devices.
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