Abstract
The newly-developing spintronics technology requires materials that allow control of both the charge and the spin degrees of freedom of the charge carriers. Ferromagnetic semiconductors (SC) are considered suitable due to simultaneous presence of magnetic order and of semiconducting properties. GaMnAs is one of the most intensively studied ferromagnetic SC. In this paper we will review recent research and accomplishments regarding two technologically important properties – magnetic anisotropy and interlayer coupling — of GaMnAs-based multilayer structures, with an eye on their potential role in practical devices.
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