Abstract
We present a ferromagnetic resonance (FMR) study of Ga1−xMnxAs fabricated by Mn ion implantation (II) into (311) GaAs wafers followed by pulsed-laser melting (PLM). We measured the angular dependence of FMR at 4 K, and the data were then fitted by Stoner–Wohlfarth model to obtain the cubic and uniaxial anisotropy parameters. The observed angular behavior of FMR can be understood in terms of two contributions: a cubic anisotropy field parallel to the 〈001〉 axes, and a uniaxial anisotropy field parallel to the [311] direction. Our results show that the magnetic anisotropy fields in II-PLM (Ga,Mn)As are fundamentally similar to those in Ga1−xMnxAs samples grown by molecular beam epitaxy (MBE), indicating that the two different growth methods lead to materials with very similar magnetic properties.
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