Abstract
50 nm Co2FeSi thin films were deposited on Si (111) by ultra high vaccum dc magnetron sputtering at different substrate temperatures 300°C, 450°C, 550°C and 600°C. The films are characterized by grazing incidence xrd, magnetic and ferromagnetic resonance measurements. The film deposited at 550°C has B2 crystal structure with high magnetization and low coercivity. Ferromagnetic resonance and magnetic measurements are used as a tool to investigate the homogeneity of Co2FeSi thin films.
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