Abstract
Co2FeSi thin films are grown on a Si (1 0 0) substrate using ultrahigh-vacuum magnetron sputtering at different substrate temperatures from 300 °C to 550 °C. The films are characterized using grazing incidence x-ray diffraction, magnetization, and ferromagnetic resonance and temperature-dependent resistivity measurements. The films deposited at 450 °C (TS450) have better magnetic as well as structural properties with the minimum disorder. The temperature dependence of line-width () suggests two-magnon scattering is responsible for the line broadening. The correlation between the disorder and extrinsic broadening of the line-width is brought out clearly for the first time in Co2FeSi thin films. TS450 film has minimum (33 Oe) and Gilbert damping parameter (α = 0.005) at room temperature making it ideal for spintronic applications.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
