Abstract
Epitaxial layers of the Heusler alloy Co2FeSi were grown by molecular beam epitaxy on GaAs(1 1 0) at different growth temperatures TG. Below a transition temperature Ttrans = 200 °C samples with high interfacial perfection and crystal quality were obtained, whereas above Ttrans a strong surface and interface roughening sets in. All samples are ferromagnetic and reveal a uniaxial magnetic anisotropy with the easy axis along the direction.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have