Abstract

Epitaxial layers of the Heusler alloy Co2FeSi were grown by molecular beam epitaxy on GaAs(1 1 0) at different growth temperatures TG. Below a transition temperature Ttrans = 200 °C samples with high interfacial perfection and crystal quality were obtained, whereas above Ttrans a strong surface and interface roughening sets in. All samples are ferromagnetic and reveal a uniaxial magnetic anisotropy with the easy axis along the direction.

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