Ferroelectricity in CMOS-Compatible Hafnium Oxides: Reviving the ferroelectric field-effect transistor technology

Abstract

A Ferroelectric Field-Effect Transistor (FEFET) is a promising candidate for next-generation memory devices because it offers numerous advantages, such as its high speed, low energy profile, and nondestructive readout process. FEFETs merge logic and memory functionality in a single device, allowing efficient data transfer and a high packing density, which could make them vital for use in future in-memory computing architectures. Although issues related to the integration of perovskite materials in the state-of-the art semiconductor industry limited their commercial success, the discovery of ferroelectricity in CMOS-compatible doped hafnium oxides led to a re-emergence of FEFETs in advanced microelectronics. The demonstration of ferroelectricity in doped hafnia at extremely thin film thicknesses plus its low permittivity, high coercive field (Ec), environment-friendly composition, and excellent CMOS compatibility are expected to unleash the promise of FEFETs, and significant progress has been made in this regard.