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Abstract
A ferroelectric (FE) varactor with a film structure BaxSr1– x TiO3 (BSTO)/SiC on a diamond substrate, designed for the use under elevated microwave (MW) power, was produced by an ion-plasma deposition technique. Comparative testing of the BSTO varactors produced on Al2O3 and diamond/SiC substrates was performed at the frequency of 3 GHz and different levels of MW power (up to $P\sim 10$ var). A significant difference in thermal response under MW power of the varactors on Al2O3 and diamond was demonstrated: the overheating of FE film was observed as $\Delta T\sim (20-30)$ K on Al2O3 and $\Delta T\sim 2$ K on diamond at maximum MW power.
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