Ferroelectric Si-Doped HfO2 Device Properties on Highly Doped Germanium

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Ferroelectric Si-doped HfO2 thin films are integrated into three different device stacks with a p+ Ge substrate, a p+ Si substrate, and a TaN bottom metal gate. The ferroelectric behavior of the Si-doped HfO2 thin films is strongly dependent on the bottom interfaces. The Si-doped HfO2 thin films have favorably improved ferroelectric properties on the p+ Ge substrate due to the lack of a dielectric interfacial layer between HfO2 and Ge. The low-voltage operation and cycling stability of Si-doped HfO2 ferroelectric thin films on Ge can lead to the realization of high performance, robust Ge ferroelectric field-effect transistors for nonvolatile memory applications.