Abstract
Ferroelectric SrBi 2Ta 2O 9 thin films were deposited on the Bi 2O 3 buffered Pt/Ti/SiO 2/Si substrates using liquid-delivery metalorganic chemical vapor deposition. The SBT films with a 5-nm-thick Bi 2O 3 buffer layer were well crystallized at a deposition temperature of 540 °C, and with increasing annealing temperature, the SBT thin films showed stronger (115) orientation than those without Bi 2O 3 buffer layer. The value of the remanent polarization of SBT films with Bi 2O 3 buffer layer were improved significantly in comparison with those for films without a Bi 2O 3 buffer layer. The remanent polarization (2 P r ) and coercive field ( E c ) of SBT films without and with a Bi 2O 3 buffer layer annealed at 750 °C were 11.9 and 20.8 μC/cm 2, and 57 and 37.8 kV/cm at an applied voltage of 5 V, respectively.
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