Abstract
Ferroelectric SrBi 2 Ta 2 O 9 thin films were deposited onto the Bi 2 O 3 /Pt/Ti/SiO 2 /Si substrates using liquid-delivery metalorganic chemical vapor deposition technique (liquid delivery MOCVD). The SBT thin films deposited on Pt/Ti/SiO 2 /Si substrate at 540 were not crystallized, however, the SBT films with Bi 2 O 3 interfacial layer were well crystallized at deposition temperature of 540 , and with increasing annealing temperature, the SBT thin films showed stronger (115) orientation than those without Bi 2 O 3 interfacial layer. The value of the remanent polarization of SBT films with Bi 2 O 3 interfacial layer were improved significantly in comparison with those for the films without Bi 2 O 3 layer. The remanent polarization (2P r ) and coercive field (E c ) of Pt/SBT/Pt/Ti/SiO 2 /Si and Pt/SBT/Bi 2 O 3 /Pt/Ti/SiO 2 /Si capacitors annealed at 750 were 11.9 and 22.5 C/cm 2 , and 57 and 38 kV/cm at an applied voltage of 5V, respectively.
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