Abstract
Strontium barium niobate (Sr 0.5Ba 0.5)Nb 2O 6 (SBN) thin films have been prepared by pulsed laser deposition technique. The substrate temperature higher than 680°C was necessary to form crystalline SBN films on either Si or Pt-coated Si substrates. The oxygen pressure ( P O 2 ), on the other hand, modified the texture property of SBN films. SBN films with (001)-preferred orientation were fabricated under 680°C (1 × 10 −2 mbar P O 2 ) conditions. A butterfly-shaped capacitance-voltage ( C- V) curve was obtained for SBN/Pt/Si film with metal-insulator-metal (MIM) structure. An asymmetric C- V curve was obtained for SBN Si film with metal-insulator-semiconductor (MIS) structure. The zero-biased dielectric constant for MIM films and the forwardly biased dielectric constant for MIS films were around K MIM = 220 and K MIS = 80, respectively. Lower dielectric constant of MIS films can be attributed to the formation of an interfacial layer between SBN and Si. Both SBN/Pt/Si and SBN Si films, however, possess good ferroelectric properties and are promising for DRAM and FRAM applications.
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