Abstract
Development of lead-free Potassium Sodium Niobate (or KNN) thin films is significant for the realization of eco-friendly and implantable MEMS based devices. In the present work, KxNa(1- x)NbO3 (x = 0.35) thin films were deposited using Pulsed Laser Deposition (PLD) technique. The effect of deposition parameters on the structure and morphology of KNN thin film has been studied. The electrical, dielectric and ferroelectric properties of KNN thin film in Metal- Insulator- Metal (MIM) capacitor configuration were investigated. The observed dielectric constant (∼531) of KNN thin film in the high frequency region (>500 kHz) was found to be in agreement with the value reported in the literature. Further, the deposited KNN thin film showed ferroelectric behavior with remanent polarization of 8.63 μC cm−2.
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