Ferroelectric Properties of Pb(Zr,Ti)O3 Thin Films Integrated at Low Temperatures on LaNiO3-Buffered Glass

Abstract

We report on the fabrication and characterization of Pb(Zr,Ti)O3 (PZT) thin films integrated on glass using lanthanum nickel oxide (LaNiO3) template layer/electrodes. The electrodes were deposited by means of sputtering and PZT thin film prepared by sol–gel and spin-coating techniques. The whole ferroelectric stack was treated by single annealing at 480°C for 30 min. X-ray diffraction revealed PZT has a pure perovskite phase with random orientation. The ferroelectric tests indicated the film exhibits excellent ferroelectric properties (remnant polarization up to 30 µm/cm2).