Abstract
Among the ferroelectric bismuth layered perovskites belonging to Aurivillius family, the MBi4Ti4O15 (MBT15, M = Sr, Ca, Pb) thin films have been fabricated by a chemical solution deposition technique, and their structures and ferroelectric properties were investigated in this work. The SrBi4Ti4O15 (SBT15) film fabricated on IrO2 presented the highest remanent polarization (Pr) among the films in this series. It demonstrated a saturated hysteresis loop at 5 V with Pr of 19 μ C/cm2 and coercive field (Ps) of 116 kV/cm. The PbBi4Ti4O15 (PBT15) thin films were selectively controlled in c-axis and off-c-axis orientation on Pt layer by adjusting the annealing condition. The off-c-axis oriented PbBi4Ti4O15 film demonstrated considerably higher Pr (8.7 μ C/cm2) than that of c-axis oriented film (3.7 μ C/cm2). Regardless of grain orientation, however, PBT15 films were not fatigued up to 1010 cycles under 9V application. The CaBi4Ti4O15 (CBT15) thin films were also produced on Pt and IrO2 electrode, respectively, by controlling the annealing condition. The CBT15 film on IrO2 presented higher Pr (∼10.8 μ C/cm2) than that of film (∼ 6.7 μ C/cm2) on Pt. † Present address: Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
