Abstract
ABSTRACT Ferroelectric CaBi4Ti4O15 (CBTi) thin films with random orientation and high c-axis orientation were prepared on a Pt(111)/Ti/SiO2/Si(100) substrate by a chemical solution deposition method. We observed a strong dependence of ferroelectric and dielectric properties on the film orientation. The CBTi thin film with random orientation exhibited remnant polarization (2P r ) of 54 μ C/cm2 at an applied electric field of 250 kV/cm and dielectric constant (ϵ) of 412 at a frequency of 1 kHz. The values of 2P r and ϵ were larger than those observed in the CBTi thin film with high c-axis orientation. In addition, the randomly oriented thin film showed lower leakage current density than the highly c-axis-oriented thin film.
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