Abstract
A heteroepitaxial ferroelectric Bi 4Ti 3O 12 (BIT) film was prepared on the bottom electrode of the epitaxial Ir or Pt film by reactive sputtering with Ar+O 2 gas. The Ir or the Pt film was deposited on an epitaxial (1 0 0) YSZ film/(1 0 0) Si substrate structure by sputtering with Ar gas. X-ray diffraction patterns showed that (0 0 1) BIT films were heteroepitaxially grown on epitaxial (1 0 0) Ir and Pt films with a 45°-rotated planar orientation. However, Rutherford backscattering spectroscopy measurements observed the existence of a number of voids in the BIT film on Ir/YSZ/Si structure in addition to interdiffusion of chemical components of its structure. On the other hand, the BIT film deposited on Pt film exhibited normal density with little interdiffusion. A polarization–voltage hysteresis loop was observed for the BIT film on Pt while it was hardly observed for the BIT film on Ir. Thus, the existence of voids in BIT films deposited on Ir films and the layer interdiffusion are possible causes behind the loss of the ferroelectric property of the BIT film.
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