Abstract
Bi 3.25 La 0.75 Ti 3 O 12 (BLT) thin films were grown on Pt/Ti/SiO2/Si and on LaNiO3 (LNO) buffered Pt/Ti/SiO2/Si substrates using sol-gel processing. Scanning electron micrographs showed the BLT films are composed of peg-like or platelet-like grains depending upon annealing temperature and the substrate type. Large platelet grains were found in BLT films deposited on the LNO/Pt/Ti/SiO2/Si substrates; those thin films showed better polarization–voltage, capacitance–voltage, and current–voltage characteristics. More importantly, they did not show any significant fatigue up to 2×1010 switching cycles at a frequency of 1 MHz and electric field 85 kV/cm.
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