Abstract
Epitaxial Pb(Zr 0.3 Ti 0.7 )O 3 films with different thicknesses and a preferential c-axis orientation were successfully fabricated on PbTiO 3 /Pt(100)/MgO(100) substrates from an amorphous state by hot isostatic pressing (HIP). Based on the results of X-ray pole figures, all the PZT films with ferroelectric layer thicknesses of 100–300 nm after HIP were almost completely epitaxial. Since the 200-nm-thick PZT film has the largest initial pulse-derived switchable polarization and an intermediate reduction rate of the three samples, its polarization fatigue characteristics are relatively superior to these of the others. From the measurements of static imprint characteristics, the observed shifts of the PZT samples apparently decreasing with decreasing film thickness.
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