Abstract

Temperature- and field-induced phase transitions in ferroelectric nanoscale TiN/Si:HfO2/TiN capacitors with 3.8 to 5.6mol% Si content are investigated for energy conversion and storage applications. Films with 5.6mol% Si concentration exhibit an energy storage density of ~40J/cm3 with a very high efficiency of ~80% over a wide temperature range useful for supercapacitors. Furthermore, giant pyroelectric coefficients of up to −1300µC/(m2K) are observed due to temperature dependent ferroelectric to paraelectric phase transitions. The broad transition region is related to the grain size distribution and adjustable by the Si content. This strong pyroelectricity yields electrothermal coupling factors k2 of up to 0.591 which are more than one order of magnitude higher than the best values ever reported. This enables pyroelectric energy harvesting with the highest harvestable energy density ever reported of 20.27J/cm3 per Olsen cycle. Possible applications in infrared sensing are discussed. Inversely, through the electrocaloric effect an adiabatic temperature change of up to 9.5K and the highest refrigerant capacity ever reported of 19.6J/cm3 per cycle is achievable. This might enable energy efficient on-chip electrocaloric cooling devices. Additionally, low cost fabrication of these films is feasible by existing semiconductor process technology.

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