Ferroelectric ordering and energy storage density of thin films capacitor by doping La3+ and Sc3+ on Pb(Zr0.53Ti0.47)O3 using pulse laser deposition technique

Abstract

Highly oriented 0.90[PbZr0.53Ti0.47]0.10[La0.80Sc0.20]O3-δ (PLZTS) thin films deposited on La0.67Sr0.33MnO3 (LSMO) coated MgO (100) substrates were grown by pulsed laser deposition technique. Temperature dependent dielectric measurements on metal-ferroelectric-metal Pt/PLZTS/LSMO thin film capacitors were carried out at several frequencies which exhibit high dielectric constants (450–580) with the diffuse peak around 400 K, and the diffusivity parameter γ was obtained as 1.96 for 100 kHz data. The slim polarization-electric field hysteresis loop was observed with less remanent polarization (∼7–10 μC/cm2) indicating its relaxor behavior. Temperature dependent Raman spectra measured between 80 and 550 K show softening of the symmetric E(LO2) band that disappeared at 300 K, corroborating the tetragonal-cubic phase transition. From the analysis of the measured hysteresis loops, the recovered energy density Ure ∼ 19 J/cm3 with the efficiency η ∼ 66% was estimated, suggesting its possible application in energy density capacitors.