Abstract
With a memory-cell size comparable to that of a DRAM memory cell and a manufacturing process similar to that of a stacked high-density DRAM, it can be expected that the ferroelectric technology will leverage off DRAMs and leap frog to higher memory densities. Cost analysis projects cost competitiveness with flash memory and EEPROM. Ferroelectric memory technology has been shown to have reliability levels comparable to or better than other reprogrammable nonvolatile semiconductor memories. High levels of radiation hardness make these memories suitable for near and deep-space applications. Many large semiconductor companies have substantial efforts to develop and introduce ferroelectric memories into the market.
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