Abstract
Abstract Recently the interest in ferroelectric materials for memory applications has been renewed on the basis of concepts where ferroelectric thin film capacitors are parts of an Integrated Circuit (IC) process compatible memory cell. This paper shortly reviews the field of ferroelectric memories. The selection, deposition and characterization of ferroelectric thin films and electrodes as well as the processing and integration with the appropriate IC technology will be discussed. Further measurements and analysis of electrical characteristics important for memories will be treated and a description of different published memory cells will be given.
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