FERROELECTRIC GATE FET MEMORY BASED ON CONDUCTION OF FERROELECTRIC-INSULATOR INTERFACE

Abstract

ABSTRACT A new type of ferroelectric gate field effect transistor (FET) using ferroelectric-insulator interface conduction has been proposed. Drain current flows along the interface between ferroelectric and insulator layers and needs no semiconductor. This FET consists of source and drain electrodes on ferroelectric film (Pb(Zr0.52Ti0.48)O3(PZT)) prepared on Pt/TiO2/SiO2/Si substrate, and gate electrode on HfO2 insulator film on the PZT film between the source and the drain electrodes. Drain current flows through the interface of the ferroelectric and the insulator. Drain current versus gate voltage characteristics shows clockwise hysteresis loop similarly to the conventional p-channel FET with ferroelectric gate. The FET shows that the On/Off ratio of the conduction current is about 105 and the Off state current is about 10− 10A.